IRFR825PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFR825PBF
Manufacturer

Infineon
ChipWorker Part#

CW16524525
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 500V 6A
Documentation

Datasheet

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IRFR825PBF Specifications

Attribute	Attribute Value

Part Number	IRFR825PBF
Manufacturer	Infineon
ChipWorker Part#	CW16524525
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	119 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1.05 Ω
Polarity	N-Channel
Power Dissipation	119 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	500 V
Continuous Drain Current (Ids)	6A
Rise Time	25 ns
Input Capacitance (Ciss)	1346pF @25V(Vds)
Fall Time	20 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	119W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFR825PBF is a HEXFET® single N-channel Power MOSFET offers fast body diode eliminates the need for external diodes in ZVS applications. It is suitable for zero voltage switching SMPS.
Lower gate charge results in simpler drive requirements
High gate voltage threshold offers improved noise immunity

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