IRFS31N20DPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFS31N20DPBF
Manufacturer

Infineon
ChipWorker Part#

CW34889623
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 200V 31A
Documentation

Datasheet

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IRFS31N20DPBF Specifications

Attribute	Attribute Value

Part Number	IRFS31N20DPBF
Manufacturer	Infineon
ChipWorker Part#	CW34889623
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Rating	200 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.082 Ω
Polarity	N-Channel
Power Dissipation	3.1 W
Threshold Voltage	5.5 V
Drain to Source Voltage (Vds)	200 V
Continuous Drain Current (Ids)	31A
Rise Time	38 ns
Input Capacitance (Ciss)	2370pF @25V(Vds)
Input Power (Max)	3.1 W
Fall Time	10 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.1W (Ta), 200W (Tc)
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Size-Length	10.67 mm
Size-Width	9.65 mm
Size-Height	4.83 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFS31N20DPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
Fully characterized capacitance including effective COSS to simplify design
Fully characterized avalanche voltage and current

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