IRFS4310PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFS4310PBF
Manufacturer

Infineon
ChipWorker Part#

CW11549000
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 100V 130A
Documentation

Datasheet

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IRFS4310PBF Specifications

Attribute	Attribute Value

Part Number	IRFS4310PBF
Manufacturer	Infineon
ChipWorker Part#	CW11549000
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Rating	330 W
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	0.0056 Ω
Polarity	N-Channel
Power Dissipation	300 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	130A
Rise Time	110 ns
Input Capacitance (Ciss)	7670pF @50V(Vds)
Input Power (Max)	300 W
Fall Time	78 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300000 mW
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Size-Length	10.67 mm
Size-Width	9.65 mm
Size-Height	4.83 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Obsolete
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The IRFS4310PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and di/dt capability

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