IRFS4620PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFS4620PBF
Manufacturer

Infineon
ChipWorker Part#

CW11566000
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 200V 24A
Documentation

Datasheet

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IRFS4620PBF Specifications

Attribute	Attribute Value

Part Number	IRFS4620PBF
Manufacturer	Infineon
ChipWorker Part#	CW11566000
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Rating	144 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0637 Ω
Polarity	N-CH
Power Dissipation	144 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	200 V
Continuous Drain Current (Ids)	24A
Rise Time	22.4 ns
Input Capacitance (Ciss)	1710pF @50V(Vds)
Fall Time	14.8 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	144W (Tc)
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Size-Length	10.67 mm
Size-Width	9.65 mm
Size-Height	4.83 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFS4620PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and di/dt capability

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