IRFS7530PBF - Infineon
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoIRFS7530PBF
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ManufacturerInfineon
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ChipWorker Part#CW47227586
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CategoryMOSFET, MOSFET Transistor
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PackageTO-263-3
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DescriptionD2PAK N-CH 60V 295A
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DocumentationDatasheet
Payment Methods and Delivery
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IRFS7530PBF Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | IRFS7530PBF |
| Manufacturer | Infineon |
| ChipWorker Part# | CW47227586 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.00165 Ω |
| Polarity | N-Channel |
| Power Dissipation | 375 W |
| Threshold Voltage | 3.7 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 295A |
| Input Capacitance (Ciss) | 13703pF @25V(Vds) |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 375W (Tc) |
| expand all | |
| Size-Length | 10.54 mm |
| Size-Width | 4.69 mm |
| Size-Height | 9.65 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance Edition | 2015/12/17 |
| ECCN Code | EAR99 |
Product Description
- The IRFS7530PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, synchronous rectifier applications, O-ring and redundant power switches, half-bridge and full-bridge topologies.
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and di/dt capability
Delivery
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Ordering Information
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