IRFTS8342TRPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFTS8342TRPBF
Manufacturer

Infineon
ChipWorker Part#

CW13705200
Category

MOSFET, MOSFET Transistor
Package

SOT-23-6
Description

TSOP N-CH 30V 8.2A
Documentation

Datasheet

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IRFTS8342TRPBF Specifications

Attribute	Attribute Value

Part Number	IRFTS8342TRPBF
Manufacturer	Infineon
ChipWorker Part#	CW13705200
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SOT-23-6
Power Rating	2 W
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	0.015 Ω
Polarity	N-CH
Power Dissipation	2 W
Threshold Voltage	1.8 V
Input Capacitance	560 pF
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	8.2A
Rise Time	15 ns
Input Capacitance (Ciss)	560pF @25V(Vds)
Fall Time	8.2 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2W (Ta)
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Size-Length	3 mm
Size-Width	1.75 mm
Size-Height	1.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFTS8342TRPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-DC and AC-to-DC converters.
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and di/dt capability
Industry standard pin-out

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