IRFU5505PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFU5505PBF
Manufacturer

Infineon
ChipWorker Part#

CW9756396
Category

MOSFET, MOSFET Transistor
Package

TO-251-3
Description

IPAK P-CH 55V 18A
Documentation

Datasheet

IRFU5505PBF Global Supplier

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IRFU5505PBF Specifications

Attribute	Attribute Value

Part Number	IRFU5505PBF
Manufacturer	Infineon
ChipWorker Part#	CW9756396
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-251-3
Power Rating	57 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.11 Ω
Polarity	P-Channel
Power Dissipation	57 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	55 V
Continuous Drain Current (Ids)	18A
Rise Time	28 ns
Input Capacitance (Ciss)	650pF @25V(Vds)
Fall Time	16 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	57W (Tc)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFU5505PBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. The straight lead version is for through-hole mounting applications.
Advanced process technology
Fast switching
Fully avalanche rating
Low static drain-to-source ON-resistance
Dynamic dV/dt rating
Halogen-free

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