IRFZ40PBF - VISHAY

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFZ40PBF
Manufacturer

VISHAY
ChipWorker Part#

CW46080482
Category

MOSFET, MOSFET Transistor
Package

TO-220
Description

TO-220-3 N-CH 50V 35A 28mΩ
Documentation

Datasheet

IRFZ40PBF Global Supplier

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IRFZ40PBF Specifications

Attribute	Attribute Value

Part Number	IRFZ40PBF
Manufacturer	VISHAY
ChipWorker Part#	CW46080482
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.028 Ω
Polarity	N-Channel
Power Dissipation	150 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	35.0 A
Rise Time	25 ns
Input Capacitance (Ciss)	1900pF @25V(Vds)
Input Power (Max)	150 W
Fall Time	12 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	150 W
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Packaging	Tube
Minimum Packing Quantity	50
RoHS	RoHS Compliant

Product Description

The IRFZ40PBF is a HEXFET® third generation N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for commercial-industrial applications at power dissipation levels to approximately 50W.
Dynamic dV/dt rating
Fast switching
Ease of paralleling
Simple drive requirements

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- Carefully tested and packaged by ChipWorker
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