IRFZ44EPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFZ44EPBF
Manufacturer

Infineon
ChipWorker Part#

CW9419366
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 60V 48A
Documentation

Datasheet

IRFZ44EPBF Global Supplier

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IRFZ44EPBF Specifications

Attribute	Attribute Value

Part Number	IRFZ44EPBF
Manufacturer	Infineon
ChipWorker Part#	CW9419366
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	110 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.023 Ω
Polarity	N-Channel
Power Dissipation	110 W
Threshold Voltage	4 V
Input Capacitance	1360 pF
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Continuous Drain Current (Ids)	48A
Rise Time	60 ns
Input Capacitance (Ciss)	1360pF @25V(Vds)
Fall Time	70 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	110W (Tc)
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Size-Length	10.54 mm
Size-Height	8.77 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Rail, Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFZ44EPBF is a HEXFET® N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
Advanced process technology
Dynamic dV/dt rating
Fully avalanche rating

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