IRG4BC20FDPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRG4BC20FDPBF
Manufacturer

Infineon
ChipWorker Part#

CW5852800
Category

IGBT Transistor, IGBT Module
RoHS

Lead free / RoHS Compliant
Description

Trans IGBT Chip N-CH 600V 16A 60000mW 3Pin(3+Tab) TO-220AB Tube
Documentation

Datasheet

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IRG4BC20FDPBF Specifications

Attribute	Attribute Value

Part Number	IRG4BC20FDPBF
Manufacturer	Infineon
ChipWorker Part#	CW5852800
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	60 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	60 W
Rise Time	20.0 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	37 ns
Input Power (Max)	60 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	60000 mW
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Size-Length	10.54 mm
Size-Width	4.69 mm
Size-Height	8.77 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRG4BC20FDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for medium operating frequencies (1 to 5kHz in hard switching, >20kHz in resonant mode). It feature generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED® diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.
Optimized for specific application conditions
Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs

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