IRG4BC20UDPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRG4BC20UDPBF
Manufacturer

Infineon
ChipWorker Part#

CW9827467
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 600V 13A 60000mW 3Pin(3+Tab) TO-220AB Tube
Documentation

Datasheet

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IRG4BC20UDPBF Specifications

Attribute	Attribute Value

Part Number	IRG4BC20UDPBF
Manufacturer	Infineon
ChipWorker Part#	CW9827467
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	60 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	60 W
Rise Time	15.0 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	37 ns
Input Power (Max)	60 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	60000 mW
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Size-Length	10.54 mm
Size-Width	4.69 mm
Size-Height	8.77 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRG4BC20UDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for high operating frequencies 8 to 40kHz in hard switching, >200kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED® diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.
Optimized for specific application conditions
Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs

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