IRG4BC30SPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRG4BC30SPBF
Manufacturer

Infineon
ChipWorker Part#

CW11146636
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 600V 34A 100000mW 3Pin(3+Tab) TO-220AB Tube
Documentation

Datasheet

IRG4BC30SPBF Global Supplier

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IRG4BC30SPBF Specifications

Attribute	Attribute Value

Part Number	IRG4BC30SPBF
Manufacturer	Infineon
ChipWorker Part#	CW11146636
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	100 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	100 W
Rise Time	18.0 ns
Breakdown Voltage (Collector to Emitter)	600 V
Input Power (Max)	100 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	100 W
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Size-Length	10.54 mm
Size-Width	4.69 mm
Size-Height	15.24 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRG4BC30SPBF is an Insulated Gate Bipolar Transistor optimized for minimum saturation voltage and low operating frequencies (<1kHz). The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3.
Optimized for specific application conditions
Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs

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