IRG4IBC30UDPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRG4IBC30UDPBF
Manufacturer

Infineon
ChipWorker Part#

CW10700510
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 600V 17A 45000mW 3Pin(3+Tab) TO-220 Full-Pak Tube
Documentation

Datasheet

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IRG4IBC30UDPBF Specifications

Attribute	Attribute Value

Part Number	IRG4IBC30UDPBF
Manufacturer	Infineon
ChipWorker Part#	CW10700510
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	45 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	45 W
Input Capacitance	1100 pF
Rise Time	21 ns
Breakdown Voltage (Collector to Emitter)	600 V
Thermal Resistance	65 ℃/W
Reverse recovery time	42 ns
Input Power (Max)	45 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	45000 mW
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Size-Length	10.67 mm
Size-Width	4.83 mm
Size-Height	9.02 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRG4IBC30UDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for high operating frequencies 8 to 40kHz in hard switching, >200kHz in resonant mode. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery anti-parallel diodes.
Tighter parameter distribution
Simplified assembly
High efficiency and power density
HEXFRED™ anti-parallel diode minimizes switching losses and EMI
4.8mm Creepage distance to heat sink

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