IRG4PC50SPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRG4PC50SPBF
Manufacturer

Infineon
ChipWorker Part#

CW10179369
Category

IGBT Transistor, IGBT Module
RoHS

Lead free / RoHS Compliant
Description

IGBT Single Transistor, 70A, 1.62V, 200W, 600V, TO-247AC, 3Pins
Documentation

Datasheet

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IRG4PC50SPBF Specifications

Attribute	Attribute Value

Part Number	IRG4PC50SPBF
Manufacturer	Infineon
ChipWorker Part#	CW10179369
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	200 W
Number of Positions	3 Position
Power Dissipation	200 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	50 ns
Input Power (Max)	200 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200000 mW
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Size-Length	15.9 mm
Size-Width	5.3 mm
Size-Height	20.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The IRG4PC50SPBF is an Insulated Gate Bipolar Transistor optimized for minimum saturation voltage and low operating frequencies (<1kHz). The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3.

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