IRG4PF50WDPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRG4PF50WDPBF
Manufacturer

Infineon
ChipWorker Part#

CW5786304
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 900V 51A 200000mW 3Pin(3+Tab) TO-247AC Tube
Documentation

Datasheet

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IRG4PF50WDPBF Specifications

Attribute	Attribute Value

Part Number	IRG4PF50WDPBF
Manufacturer	Infineon
ChipWorker Part#	CW5786304
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	200 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	200 W
Rise Time	52.0 ns
Breakdown Voltage (Collector to Emitter)	900 V
Reverse recovery time	90 ns
Input Power (Max)	200 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200000 mW
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Size-Length	15.9 mm
Size-Width	5.3 mm
Size-Height	20.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRG4PF50WDPBF is a 900V Warp 20 to 100kHz copack IGBT with ultrafast soft recovery diode designed for switch mode power supply, welding and PFC applications. Latest generation IGBT design and construction offers tighter parameters distribution and exceptional reliability. Low conduction losses and minimal minority carrier recombination makes as an excellent option for resonant mode switching (up to >100kHz). HEXFRED diodes optimized for performance and used in bridge configurations.
50% Reduction of Eoff parameter
Lower switching losses allow more effective operation in replacing large die MOSFET up to 100kHz

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