IRG4PH50KPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRG4PH50KPBF
Manufacturer

Infineon
ChipWorker Part#

CW12087159
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

IGBT Single Transistor, 45A, 3.28V, 200W, 1.2kV, TO-247AC, 3Pins
Documentation

Datasheet

IRG4PH50KPBF Global Supplier

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IRG4PH50KPBF Specifications

Attribute	Attribute Value

Part Number	IRG4PH50KPBF
Manufacturer	Infineon
ChipWorker Part#	CW12087159
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	200 W
Number of Positions	3 Position
Power Dissipation	200 W
Breakdown Voltage (Collector to Emitter)	1200 V
Input Power (Max)	200 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200000 mW
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Size-Length	15.9 mm
Size-Width	5.3 mm
Size-Height	20.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The IRG4PH50KPBF is an Insulated Gate Bipolar Transistor combines low conduction losses with high switching speed. It feature latest generation design provides tighter parameter distribution and higher efficiency than previous generations. As a freewheeling diode recommend our HEXFRED™ ultrafast, ultra-soft recovery diodes for minimum EMI/noise and switching losses in the diode and IGBT.
Latest generation 4 IGBT"s offer highest power density motor controls possible

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