IRG7PH42UD1PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRG7PH42UD1PBF
Manufacturer

Infineon
ChipWorker Part#

CW17318904
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 1200V 85A 313000mW 3Pin(3+Tab) TO-247AC Tube
Documentation

Datasheet

IRG7PH42UD1PBF Global Supplier

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IRG7PH42UD1PBF Specifications

Attribute	Attribute Value

Part Number	IRG7PH42UD1PBF
Manufacturer	Infineon
ChipWorker Part#	CW17318904
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	313 W
Number of Positions	3 Position
Power Dissipation	313 W
Breakdown Voltage (Collector to Emitter)	1200 V
Input Power (Max)	313 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	313000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Obsolete
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRG7PH42UD1PBF is an Insulated Gate Bipolar Transistor with ultra-low VF diode for induction heating and soft switching applications. It features rugged transient performance for increased reliability and excellent current sharing in parallel operation.
Low VCE (ON) Trench IGBT technology
Low switching losses
Square RBSOA
Ultra-low VF diode
100% of Parts tested for ILM
Positive VCE (ON) temperature coefficient
Tight parameter distribution
Low EMI
1300Vpk Repetitive transient capacity

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