IRG7PH42UPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRG7PH42UPBF
Manufacturer

Infineon
ChipWorker Part#

CW11960532
Category

IGBT Transistor, IGBT Module
RoHS

Lead free / RoHS Compliant
Description

Trans IGBT Chip N-CH 1200V 90A 385000mW 3Pin(3+Tab) TO-247AC Tube
Documentation

Datasheet

IRG7PH42UPBF Global Supplier

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IRG7PH42UPBF Specifications

Attribute	Attribute Value

Part Number	IRG7PH42UPBF
Manufacturer	Infineon
ChipWorker Part#	CW11960532
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	385 W
Number of Positions	3 Position
Power Dissipation	385 W
Breakdown Voltage (Collector to Emitter)	1200 V
Input Power (Max)	385 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	385 W
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Size-Length	15.87 mm
Size-Width	5.31 mm
Size-Height	20.7 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRG7PH42UPBF is an Insulated Gate Bipolar Transistor suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses. It features rugged transient performance for increased reliability and excellent current sharing in parallel operation.
Low VCE (ON) Trench IGBT technology
Low switching losses
Square RBSOA
100% of Parts tested for ILM
Positive VCE (ON) temperature coefficient
Tight parameter distribution
High efficiency in a wide range of applications

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