IRG7PSH73K10PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRG7PSH73K10PBF
Manufacturer

Infineon
ChipWorker Part#

CW12885939
Category

IGBT Transistor, IGBT Module
Package

TO-274-3
Description

IGBT Single Transistor, 220A, 2V, 1.15kW, 1.2kV, TO-274AA, 3Pins
Documentation

Datasheet

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IRG7PSH73K10PBF Specifications

Attribute	Attribute Value

Part Number	IRG7PSH73K10PBF
Manufacturer	Infineon
ChipWorker Part#	CW12885939
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-274-3
Power Rating	1.15 kW
Number of Positions	3 Position
Power Dissipation	1.15 kW
Breakdown Voltage (Collector to Emitter)	1200 V
Input Power (Max)	1150 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.15 kW
	expand all
Size-Length	16.1 mm
Size-Width	5.5 mm
Size-Height	20.8 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The IRG7PSH73K10PBF is an Insulated Gate Bipolar Transistor suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses. It features rugged transient performance for increased reliability and excellent current sharing in parallel operation.
Low VCE (ON) Trench IGBT technology
Low switching losses
Square RBSOA
100% of Parts tested for ILM
Positive VCE (ON) temperature coefficient
Tight parameter distribution
High efficiency in a wide range of applications
10µs Short-circuit SOA

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