IRGB30B60KPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRGB30B60KPBF
Manufacturer

Infineon
ChipWorker Part#

CW6291329
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

IGBT Single Transistor, 78A, 2.35V, 370W, 600V, TO-220AB, 3Pins
Documentation

Datasheet

IRGB30B60KPBF Global Supplier

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IRGB30B60KPBF Specifications

Attribute	Attribute Value

Part Number	IRGB30B60KPBF
Manufacturer	Infineon
ChipWorker Part#	CW6291329
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	370 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	370 W
Rise Time	28.0 ns
Breakdown Voltage (Collector to Emitter)	600 V
Input Power (Max)	370 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	370 W
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Size-Length	10.66 mm
Size-Width	4.82 mm
Size-Height	16.51 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The IRGB30B60KPBF is an Insulated Gate Bipolar Transistor features low VCE (on) non-punch through IGBT technology and rugged transient performance.
Square RBSOA
Positive VCE (on) temperature coefficient
Low EMI
Excellent current sharing in parallel operation
10µs Short-circuit capability

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