IRGB4062DPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRGB4062DPBF
Manufacturer

Infineon
ChipWorker Part#

CW5975396
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

IGBT Single Transistor, 48A, 1.65V, 250W, 600V, TO-220, 3Pins
Documentation

Datasheet

IRGB4062DPBF Global Supplier

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IRGB4062DPBF Specifications

Attribute	Attribute Value

Part Number	IRGB4062DPBF
Manufacturer	Infineon
ChipWorker Part#	CW5975396
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	250 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	250 W
Rise Time	22.0 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	89 ns
Input Power (Max)	250 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	250000 mW
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Size-Length	10.66 mm
Size-Width	4.82 mm
Size-Height	9.02 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The IRGB4062DPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features rugged transient performance for increased reliability and excellent current sharing in parallel operation. It is suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses.
Low VCE (ON) Trench IGBT technology
Low switching losses
Square RBSOA
100% of Parts tested for ILM
Positive VCE (ON) temperature coefficient
Ultrafast soft recovery co-pack diode
Tight parameter distribution
High efficiency in a wide range of applications
Low EMI
5µs Short-circuit SOA

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