IRGP35B60PDPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRGP35B60PDPBF
Manufacturer

Infineon
ChipWorker Part#

CW4848589
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 60A 308000mW 3Pin(3+Tab) TO-247AC Tube
Documentation

Datasheet

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IRGP35B60PDPBF Specifications

Attribute	Attribute Value

Part Number	IRGP35B60PDPBF
Manufacturer	Infineon
ChipWorker Part#	CW4848589
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	308 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	308 W
Rise Time	6.00 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	42 ns
Input Power (Max)	308 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	308000 mW
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Size-Length	15.9 mm
Size-Width	5.3 mm
Size-Height	20.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRGP35B60PDPBF is an IGBT with ultrafast soft recovery diode. It features parallel operation for higher current applications, lower conduction losses and switching losses. The WARP2 series IGBT is suitable for telecom and server SMPS, PFC and ZVS SMPS circuits.
NPT technology, positive temperature coefficient
Low collector-to-emitter saturation voltage
Lower parasitic capacitances
Minimal tail current
HEXFRED™ ultrafast soft-recovery co-pack diode
Tighter distribution of parameters
High reliability
High switching frequency up to 150kHz

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