IRGP4063DPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRGP4063DPBF
Manufacturer

Infineon
ChipWorker Part#

CW6218433
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

IGBT Single Transistor, 96A, 2.14V, 330W, 600V, TO-247AC, 3Pins
Documentation

Datasheet

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IRGP4063DPBF Specifications

Attribute	Attribute Value

Part Number	IRGP4063DPBF
Manufacturer	Infineon
ChipWorker Part#	CW6218433
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	300 V
Current Rating	96.0 A
Power Rating	330 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	330 W
Part Family	IRGP4063D
Gate Charge	140 nC
Drain to Source Voltage (Vds)	300 V
Continuous Drain Current (Ids)	96.0 A
Rise Time	56.0 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	115 ns
Input Power (Max)	330 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	330000 mW
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Size-Length	15.9 mm
Size-Width	5.3 mm
Size-Height	20.3 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The IRGP4063DPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features rugged transient performance for increased reliability and excellent current sharing in parallel operation. It is suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses.
Low VCE (ON) Trench IGBT technology
Low switching losses
Square RBSOA
100% of Parts tested for 4X rated current (ILM)
Positive VCE (ON) temperature coefficient
Ultrafast soft recovery co-pack diode
Tight parameter distribution
High efficiency in a wide range of applications
Low EMI
5µs Short-circuit SOA

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