IRGP4650DPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRGP4650DPBF
Manufacturer

Infineon
ChipWorker Part#

CW10603430
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 76A 268000mW 3Pin(3+Tab) TO-247AC Tube
Documentation

Datasheet

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IRGP4650DPBF Specifications

Attribute	Attribute Value

Part Number	IRGP4650DPBF
Manufacturer	Infineon
ChipWorker Part#	CW10603430
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	268 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	268 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	120 ns
Input Power (Max)	268 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	268 W
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Size-Length	15.87 mm
Size-Width	5.31 mm
Size-Height	20.7 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRGP4650DPBF is a 600V Ultrafast copack IGBT with soft recovery diode. Hard switching process optimized for high operating frequency. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. HEXFRED diodes optimized for performance and used in bridge configurations.
5µs Short circuit capability
High efficiency in a wide range of applications and switching frequencies
Low VCE (on) non punch through IGBT technology
Square RBSOA
Positive VCE (on) temperature coefficient
Excellent current sharing in parallel operation
Improved reliability due to rugged hard switching performance and higher power capability
Enables short circuit protection scheme

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