IRGP50B60PD1PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRGP50B60PD1PBF
Manufacturer

Infineon
ChipWorker Part#

CW1587804
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 75A 390000mW 3Pin(3+Tab) TO-247AC Tube
Documentation

Datasheet

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IRGP50B60PD1PBF Specifications

Attribute	Attribute Value

Part Number	IRGP50B60PD1PBF
Manufacturer	Infineon
ChipWorker Part#	CW1587804
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	390 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	390 W
Input Capacitance	3648 pF
Rise Time	10.0 ns
Breakdown Voltage (Collector to Emitter)	600 V
Thermal Resistance	40 ℃/W
Reverse recovery time	42 ns
Input Power (Max)	390 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	390000 mW
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Size-Length	15.9 mm
Size-Width	5.3 mm
Size-Height	20.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRGP50B60PD1PBF is a 600V Warp2 IGBT with ultrafast soft recovery diode. Parallel operation for higher current applications and lower conduction losses and switching losses. Suitable for use in telecom and server SMPS, PFC and ZVS SMPS circuits.
Higher switching frequency up to 150kHz
NPT technology, positive temperature coefficient
Lower VCE (SAT)
Lower parasitic capacitances
Minimal tail current
HEXFRED ultra fast soft-recovery co-pack diode
Tighter distribution of parameters
Higher reliability

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