IRGPS40B120UDP - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRGPS40B120UDP
Manufacturer

Infineon
ChipWorker Part#

CW11402733
Category

IGBT Transistor, IGBT Module
Package

TO-274-3
Description

Trans IGBT Chip N-CH 1200V 80A 595000mW 3Pin(3+Tab) TO-274AA Tube
Documentation

Datasheet

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IRGPS40B120UDP Specifications

Attribute	Attribute Value

Part Number	IRGPS40B120UDP
Manufacturer	Infineon
ChipWorker Part#	CW11402733
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-274-3
Power Rating	595 W
Number of Positions	3 Position
Power Dissipation	595 W
Breakdown Voltage (Collector to Emitter)	1200 V
Reverse recovery time	180 ns
Input Power (Max)	595 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	595 W
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Size-Length	16.1 mm
Size-Width	5.3 mm
Size-Height	20.8 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRGPS40B120UDP is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features ultra-soft diode reverse recovery characteristics and excellent current sharing in parallel operation.
Non-punch through IGBT technology
Low diode VF
Square RBSOA
Positive VCE (on) temperature coefficient
Rugged transient performance
Low EMI
Significantly less snubber required
10µs Short-circuit capability

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