IRL8113PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRL8113PBF
Manufacturer

Infineon
ChipWorker Part#

CW13469900
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 30V 105A
Documentation

Datasheet

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IRL8113PBF Specifications

Attribute	Attribute Value

Part Number	IRL8113PBF
Manufacturer	Infineon
ChipWorker Part#	CW13469900
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	110 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.006 Ω
Polarity	N-CH
Power Dissipation	110 W
Threshold Voltage	2.25 V
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	105A
Rise Time	38 ns
Input Capacitance (Ciss)	2840pF @15V(Vds)
Input Power (Max)	110 W
Fall Time	5 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	110000 mW
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Size-Height	8.77 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRL8113PBF is a HEXFET® N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency synchronous buck converters.
Low gate charge
Low RDS (ON) at 4.5V VGS

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