IRLB3813PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLB3813PBF
Manufacturer

Infineon
ChipWorker Part#

CW2944233
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 30V 260A
Documentation

Datasheet

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IRLB3813PBF Specifications

Attribute	Attribute Value

Part Number	IRLB3813PBF
Manufacturer	Infineon
ChipWorker Part#	CW2944233
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	230 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0016 Ω
Polarity	N-CH
Power Dissipation	230 W
Threshold Voltage	1.9 V
Input Capacitance	8420 pF
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	260A
Rise Time	170 ns
Input Capacitance (Ciss)	8420pF @15V(Vds)
Input Power (Max)	230 W
Fall Time	60 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	230W (Tc)
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Size-Length	10.67 mm
Size-Width	4.83 mm
Size-Height	9.02 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRLB3813PBF is a HEXFET® N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is optimized for UPS/inverter applications. It is suitable for high frequency isolated DC-to-DC converters with synchronous rectification for telecom use.
Ultra-low gate impedance
Very low RDS (ON) at 4.5V VGS

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