IRLB4030PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLB4030PBF
Manufacturer

Infineon
ChipWorker Part#

CW2312346
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 100V 180A
Documentation

Datasheet

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IRLB4030PBF Specifications

Attribute	Attribute Value

Part Number	IRLB4030PBF
Manufacturer	Infineon
ChipWorker Part#	CW2312346
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	370 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0034 Ω
Polarity	N-Channel
Power Dissipation	370 W
Threshold Voltage	2.5 V
Input Capacitance	11360 pF
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	180A
Rise Time	330 ns
Input Capacitance (Ciss)	11360pF @50V(Vds)
Input Power (Max)	370 W
Fall Time	170 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	370000 mW
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Size-Length	10.67 mm
Size-Width	4.83 mm
Size-Height	9.02 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRLB4030PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for DC motor drive, high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
Optimized for logic level drive
Very low RDS (ON) at 4.5V VGS
Superior R*Q at 4.5V VGS
Improved gate, avalanche and dynamic dv/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability

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