IRLD120PBF - VISHAY

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLD120PBF
Manufacturer

VISHAY
ChipWorker Part#

CW17694757
Category

MOSFET, MOSFET Transistor
RoHS

Lead free / RoHS Compliant
Description

HVMDIP-4 N-CH 100V 1.3A 270mΩ
Documentation

Datasheet

IRLD120PBF Global Supplier

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IRLD120PBF Specifications

Attribute	Attribute Value

Part Number	IRLD120PBF
Manufacturer	VISHAY
ChipWorker Part#	CW17694757
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	4 Pin
Case/Package	DIP-4
Voltage Rating (DC)	100 V
Current Rating	1.30 A
Power Rating	1.3 W
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	270 mΩ
Polarity	N-Channel
Power Dissipation	1.3 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	1.30 A
Rise Time	64 ns
Input Capacitance (Ciss)	490pF @25V(Vds)
Input Power (Max)	1.3 W
Fall Time	27 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.3 W
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Size-Length	5 mm
Size-Width	6.29 mm
Size-Height	3.37 mm
Product Lifecycle Status	Active
Packaging	Tube
Minimum Packing Quantity	2500
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

Product Description

The IRLD120PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.
Dynamic dV/dt rating
For automatic insertion
Repetitive avalanche rated
End stackable
Logic-level gate drive
RDS (ON) Specified at VGS = 4 and 5V
-55 to 175°C Operating temperature range

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