IRLH5030TRPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLH5030TRPBF
Manufacturer

Infineon
ChipWorker Part#

CW15253778
Category

MOSFET, MOSFET Transistor
Package

QFN-8
Description

PQFN N-CH 100V 13A
Documentation

Datasheet

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IRLH5030TRPBF Specifications

Attribute	Attribute Value

Part Number	IRLH5030TRPBF
Manufacturer	Infineon
ChipWorker Part#	CW15253778
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	QFN-8
Power Rating	3.6 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0072 Ω
Polarity	N-Channel
Power Dissipation	3.6 W
Threshold Voltage	2.5 V
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	13A
Rise Time	72 ns
Input Capacitance (Ciss)	5185pF @50V(Vds)
Fall Time	41 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3600 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRLH5030TRPBF is a HEXFET® single N-channel Power MOSFET offers industry standard pin-out for multi-vendor compatibility. It is suitable for secondary side synchronous rectification, boost converters and DC-to-DC brick applications. It is compatible with existing surface-mount techniques.
Low RDS (ON) (
Low thermal resistance to PCB (
100% Rg tested for increased reliability
Halogen-free
Industrial qualification MSL-1 (increased reliability)

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