IRLI520NPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLI520NPBF
Manufacturer

Infineon
ChipWorker Part#

CW5329140
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220FP N-CH 100V 8.1A
Documentation

Datasheet

IRLI520NPBF Global Supplier

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IRLI520NPBF Specifications

Attribute	Attribute Value

Part Number	IRLI520NPBF
Manufacturer	Infineon
ChipWorker Part#	CW5329140
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	27 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.18 Ω
Polarity	N-Channel
Power Dissipation	27 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	8.1A
Rise Time	35 ns
Input Capacitance (Ciss)	440pF @25V(Vds)
Input Power (Max)	30 W
Fall Time	22 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	30W (Tc)
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Size-Length	10 mm
Size-Width	4.4 mm
Size-Height	9.8 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRLI520NPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mica barrier. The package is mounted to a heat sink using a single clip or by a single screw fixing.
Logic level gate drive
Advanced process technology
Isolated package
Fully avalanche rating
Low static drain-to-source ON-resistance
Logic level

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