IRLIB9343PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLIB9343PBF
Manufacturer

Infineon
ChipWorker Part#

CW14892800
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220FP P-CH 55V 14A
Documentation

Datasheet

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IRLIB9343PBF Specifications

Attribute	Attribute Value

Part Number	IRLIB9343PBF
Manufacturer	Infineon
ChipWorker Part#	CW14892800
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.093 Ω
Polarity	P-Channel
Power Dissipation	33 W
Threshold Voltage	1 V
Input Capacitance	660 pF
Drain to Source Voltage (Vds)	55 V
Continuous Drain Current (Ids)	14A
Rise Time	24 ns
Input Capacitance (Ciss)	660pF @50V(Vds)
Input Power (Max)	33 W
Fall Time	9.5 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	33W (Tc)
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Size-Length	10.63 mm
Size-Width	4.83 mm
Size-Height	9.8 mm
Operating Temperature	-40℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The IRLIB9343PBF is a -55V single P-channel Digital Audio HEXFET® Power MOSFET specifically designed for class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET is 175°C operating junction temperature and repetitive avalanche capability. It features combine to make this MOSFET a highly efficient, robust and reliable device for class-D audio amplifier applications.
Advanced process technology
Key parameters optimized for class-D audio amplifier applications
Low RDS (ON) for improved efficiency
Low QG and QSW for better THD and improved efficiency
Low QRR for better THD and lower EMI
Repetitive avalanche capability for robustness and reliability
175°C Operating junction temperature for ruggedness

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