IRLL2705TRPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLL2705TRPBF
Manufacturer

Infineon
ChipWorker Part#

CW1806683
Category

MOSFET, MOSFET Transistor
Package

TO-261-4
Description

SOT-223 N-CH 55V 5.2A
Documentation

Datasheet

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IRLL2705TRPBF Specifications

Attribute	Attribute Value

Part Number	IRLL2705TRPBF
Manufacturer	Infineon
ChipWorker Part#	CW1806683
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-261-4
Power Rating	2.1 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.04 Ω
Polarity	N-CH
Power Dissipation	1 W
Threshold Voltage	2 V
Input Capacitance	870 pF
Drain to Source Voltage (Vds)	55 V
Continuous Drain Current (Ids)	5.2A
Rise Time	12 ns
Input Capacitance (Ciss)	870pF @25V(Vds)
Input Power (Max)	1 W
Fall Time	22 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1W (Ta)
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.739 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRLL2705TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1W is possible in a typical surface-mount application.
Dynamic dV/dt rating
Logic level gate drive
Ease of paralleling
Advanced process technology
Low static drain-to-source ON-resistance

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