IRLML6401PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLML6401PBF
Manufacturer

Infineon
ChipWorker Part#

CW40352875
Category

MOSFET, MOSFET Transistor
Package

SOT-23
Description

SOT-23P-CH 12V 4.3A
Documentation

Datasheet

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IRLML6401PBF Specifications

Attribute	Attribute Value

Part Number	IRLML6401PBF
Manufacturer	Infineon
ChipWorker Part#	CW40352875
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.05 Ω
Polarity	P-CH
Power Dissipation	1.3 W
Threshold Voltage	550 mV
Drain to Source Voltage (Vds)	12 V
Continuous Drain Current (Ids)	4.3A
Operating Temperature (Max)	150 ℃
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Product Lifecycle Status	Active
RoHS	RoHS Compliant
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRLML6401PBF from International Rectifier is -12V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications such as battery and load management, portable electronics and PCMCIA cards and printed circuit board where space is at a premium.
Drain to source voltage (Vds) of -12V
Gate to source voltage of ±8V
On resistance Rds(on) of 125mohm at Vgs -1.8V
Power dissipation Pd of 1.3W at 25°C
Continuous drain current Id of -4.3A at Vgs -4.5V and 25°C
Operating junction temperature range from -55°C to 150°C

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