IRLR110PBF - VISHAY

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLR110PBF
Manufacturer

VISHAY
ChipWorker Part#

CW48743240
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

TO-252-3 N-CH 100V 4.3A 540mΩ
Documentation

Datasheet

IRLR110PBF Global Supplier

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IRLR110PBF Specifications

Attribute	Attribute Value

Part Number	IRLR110PBF
Manufacturer	VISHAY
ChipWorker Part#	CW48743240
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	100 V
Current Rating	4.30 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.54 Ω
Polarity	N-Channel
Power Dissipation	2.5 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	4.30 A
Rise Time	47 ns
Input Capacitance (Ciss)	250pF @25V(Vds)
Input Power (Max)	2.5 W
Fall Time	17 ns
Operating Temperature (Max)	150 ℃
Power Dissipation (Max)	2.5W (Ta), 25W (Tc)
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Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
Minimum Packing Quantity	2000
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The IRLR110PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
Dynamic dV/dt rating
Repetitive avalanche rated
Surface-mount
Logic-level gate drive
RDS (ON) Specified at VGS = 4 and 5V

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