IRLR120NPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLR120NPBF
Manufacturer

Infineon
ChipWorker Part#

CW9064825
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 100V 10A
Documentation

Datasheet

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IRLR120NPBF Specifications

Attribute	Attribute Value

Part Number	IRLR120NPBF
Manufacturer	Infineon
ChipWorker Part#	CW9064825
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	39 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.185 Ω
Polarity	N-Channel
Power Dissipation	48 W
Threshold Voltage	2 V
Input Capacitance	440pF @25V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	10A
Rise Time	35 ns
Input Capacitance (Ciss)	440pF @25V(Vds)
Fall Time	22 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	48W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRLR120NPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
Advanced process technology
Fast switching
Fully avalanche rating
Low static drain-to-source ON-resistance
Dynamic dV/dt rating
Logic level

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