IRLR2908PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLR2908PBF
Manufacturer

Infineon
ChipWorker Part#

CW10294250
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 80V 39A
Documentation

Datasheet

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IRLR2908PBF Specifications

Attribute	Attribute Value

Part Number	IRLR2908PBF
Manufacturer	Infineon
ChipWorker Part#	CW10294250
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	120 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.028 Ω
Polarity	N-Channel
Power Dissipation	120 W
Threshold Voltage	2.5 V
Drain to Source Voltage (Vds)	80 V
Continuous Drain Current (Ids)	39A
Rise Time	95 ns
Input Capacitance (Ciss)	1890pF @25V(Vds)
Input Power (Max)	120 W
Fall Time	55 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	120W (Tc)
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Size-Length	6.73 mm
Size-Width	2.39 mm
Size-Height	6.22 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRLR2908PBF is a 80V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface mount applications.
Advanced process technology
Ultra low on-resistance
Dynamic dV/dt rating
Repetitive avalanche allowed up to Tjmax
175°C Operating temperature

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