IRLR3105PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLR3105PBF
Manufacturer

Infineon
ChipWorker Part#

CW11653096
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 55V 25A
Documentation

Datasheet

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IRLR3105PBF Specifications

Attribute	Attribute Value

Part Number	IRLR3105PBF
Manufacturer	Infineon
ChipWorker Part#	CW11653096
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	57 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.037 Ω
Polarity	N-Channel
Power Dissipation	57 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	55 V
Continuous Drain Current (Ids)	25A
Rise Time	57 ns
Input Capacitance (Ciss)	710pF @25V(Vds)
Fall Time	37 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	57W (Tc)
	expand all
Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Rail, Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRLR3105PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The package is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
Logic level gate drive
Advanced process technology
Repetitive avalanche allowed up to Tjmax
Dynamic dV/dt rating
Fully avalanche rating

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