IRLR7843PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLR7843PBF
Manufacturer

Infineon
ChipWorker Part#

CW9298365
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 30V 161A
Documentation

Datasheet

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IRLR7843PBF Specifications

Attribute	Attribute Value

Part Number	IRLR7843PBF
Manufacturer	Infineon
ChipWorker Part#	CW9298365
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	140 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0033 Ω
Polarity	N-Channel
Power Dissipation	140 W
Threshold Voltage	2.3 V
Input Capacitance	4380pF @15V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Continuous Drain Current (Ids)	161A
Rise Time	42 ns
Input Capacitance (Ciss)	4380pF @15V(Vds)
Input Power (Max)	140 W
Fall Time	19 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	140W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRLR7843PBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for DC motor drive, high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
Optimized for logic level drive
Very low RDS (ON) at 4.5V VGS
Superior R*Q at 4.5V VGS
Improved gate, avalanche and dynamic dv/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability

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