IRLR9343PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLR9343PBF
Manufacturer

Infineon
ChipWorker Part#

CW11975061
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK P-CH 55V 20A
Documentation

Datasheet

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IRLR9343PBF Specifications

Attribute	Attribute Value

Part Number	IRLR9343PBF
Manufacturer	Infineon
ChipWorker Part#	CW11975061
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	79 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.093 Ω
Polarity	P-Channel
Power Dissipation	79 W
Threshold Voltage	1 V
Drain to Source Voltage (Vds)	55 V
Breakdown Voltage (Drain to Source)	55 V
Continuous Drain Current (Ids)	20A
Rise Time	24 ns
Input Capacitance (Ciss)	660pF @50V(Vds)
Fall Time	9.5 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	79W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Material	Silicon
Operating Temperature	-40℃ ~ 175℃ (TJ)
Product Lifecycle Status	Obsolete
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRLR9343PBF is a HEXFET® single P-channel MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device.
Advanced process technology
Low RDS (ON) for improved efficiency
Low Qg and Qsw for better THD and improved efficiency
Low QRR for better THD and lower EMI
Repetitive avalanche capability for robustness and reliability

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