IRLS3036TRLPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLS3036TRLPBF
Manufacturer

Infineon
ChipWorker Part#

CW5067927
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 60V 270A
Documentation

Datasheet

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IRLS3036TRLPBF Specifications

Attribute	Attribute Value

Part Number	IRLS3036TRLPBF
Manufacturer	Infineon
ChipWorker Part#	CW5067927
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Rating	380 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0019 Ω
Polarity	N-Channel
Power Dissipation	380 W
Threshold Voltage	2.5 V
Input Capacitance	11210 pF
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	270A
Rise Time	220 ns
Input Capacitance (Ciss)	11210pF @50V(Vds)
Fall Time	110 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	380W (Tc)
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Size-Length	10.67 mm
Size-Width	6.22 mm
Size-Height	2.3 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The IRLS3036TRLPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is optimized for logic level drive. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.

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