IRLS4030PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLS4030PBF
Manufacturer

Infineon
ChipWorker Part#

CW10453204
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 100V 180A
Documentation

Datasheet

IRLS4030PBF Global Supplier

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IRLS4030PBF Specifications

Attribute	Attribute Value

Part Number	IRLS4030PBF
Manufacturer	Infineon
ChipWorker Part#	CW10453204
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Rating	370 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0034 Ω
Polarity	N-Channel
Power Dissipation	370 W
Threshold Voltage	2.5 V
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	180A
Rise Time	330 ns
Input Capacitance (Ciss)	11360pF @50V(Vds)
Fall Time	170 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	370000 mW
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Size-Length	10.67 mm
Size-Width	9.65 mm
Size-Height	4.83 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRLS4030PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is optimized for logic level drive. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
Very low RDS (ON) at 4.5V VGS
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and di/dt capability
Logic level

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