IRLU120NPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLU120NPBF
Manufacturer

Infineon
ChipWorker Part#

CW10549204
Category

MOSFET, MOSFET Transistor
Package

TO-251-3
Description

IPAK N-CH 100V 10A
Documentation

Datasheet

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IRLU120NPBF Specifications

Attribute	Attribute Value

Part Number	IRLU120NPBF
Manufacturer	Infineon
ChipWorker Part#	CW10549204
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-251-3
Power Rating	48 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.185 Ω
Polarity	N-Channel
Power Dissipation	48 W
Threshold Voltage	2 V
Input Capacitance	440 pF
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	10A
Rise Time	35 ns
Input Capacitance (Ciss)	440pF @25V(Vds)
Fall Time	22 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	48W (Tc)
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Size-Length	6.73 mm
Size-Width	2.3 mm
Size-Height	6.1 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRLU120NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
175°C Operating temperature
Dynamic dV/dt rating
Fully avalanche rated
Logic level gate drive

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