IRLU3410PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLU3410PBF
Manufacturer

Infineon
ChipWorker Part#

CW13713411
Category

MOSFET, MOSFET Transistor
Package

TO-251-3
Description

IPAK N-CH 100V 17A
Documentation

Datasheet

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IRLU3410PBF Specifications

Attribute	Attribute Value

Part Number	IRLU3410PBF
Manufacturer	Infineon
ChipWorker Part#	CW13713411
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-251-3
Power Rating	52 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.105 Ω
Polarity	N-Channel
Power Dissipation	52 W
Threshold Voltage	2 V
Input Capacitance	800pF @25V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	17A
Input Capacitance (Ciss)	800pF @25V(Vds)
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	79W (Tc)
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Size-Length	6.73 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Rail, Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRLU3410PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. The straight lead version is for through-hole mounting applications.
Logic level gate drive
Advanced process technology
Fully avalanche rating
Dynamic dV/dt rating

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