IRS21864SPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRS21864SPBF
Manufacturer

Infineon
ChipWorker Part#

CW11382303
Category

FET Driver
Package

SOIC-14
Description

600V High and Low Side Driver IC with typical 4A source and 4A sink currents in 14 Lead SOIC package for IGBTs and MOSFETs. Also available in 14 Lead PDIP, 8 Lead SOIC, and 8 Lead PDIP.
Documentation

Datasheet

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IRS21864SPBF Specifications

Attribute	Attribute Value

Part Number	IRS21864SPBF
Manufacturer	Infineon
ChipWorker Part#	CW11382303
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	14 Pin
Case/Package	SOIC-14
Power Rating	1 W
Rise/Fall Time	22ns, 18ns
Number of Outputs	2 Output
Output Voltage	600 V
Output Current	4 A
Number of Channels	2 Channel
Number of Positions	14 Position
Power Dissipation	1000 mW
Fall Time (Max)	30 ns
Fall Time (Max)	38 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	1000 mW
Supply Voltage	10V ~ 20V
Supply Voltage (Max)	20 V
Supply Voltage (Min)	10 V
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Size-Length	8.74 mm
Size-Width	3.99 mm
Size-Height	1.5 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRS21864SPBF is a high voltage high speed power MOSFET and IGBT high and low Side Driver with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
Floating channel designed for bootstrap operation
Tolerant to negative transient voltage (dV/dt immune)
Under-voltage lockout for both channels
Matched propagation delay for both channels
Logic and power ground ±5V offset
Lower di/dt gate driver for better noise immunity
Output source/sink current 4A/4A

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