IRS21867STRPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRS21867STRPBF
Manufacturer

Infineon
ChipWorker Part#

CW3677023
Category

FET Driver
Package

SOIC-8
Description

MOSFET DRVR 600V 4A 2Out Hi/Lo Side Non-Inv 8Pin SOIC N T/R
Documentation

Datasheet

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IRS21867STRPBF Specifications

Attribute	Attribute Value

Part Number	IRS21867STRPBF
Manufacturer	Infineon
ChipWorker Part#	CW3677023
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	10.0V (min)
Rise/Fall Time	22ns, 18ns
Number of Outputs	2 Output
Number of Positions	8 Position
Power Dissipation	625 mW
Quiescent Current	240 µA
Rise Time	38 ns
Fall Time	30 ns
Fall Time (Max)	30 ns
Fall Time (Max)	38 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	625 mW
Supply Voltage	10V ~ 20V
Supply Voltage (Max)	20 V
Supply Voltage (Min)	10 V
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRS21867STRPBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Low VCC operation allows use in battery powered applications. The logic input is compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
Floating channel designed for bootstrap operation
Tolerant to negative transient voltage, DV/DT Immune
Low VCC operation
Under-voltage lockout for both channels
Matched propagation delay for both channels
Lower DI/DT gate driver for better noise immunity
Logic and power ground ±5V offset
ESD sensitive device, take proper precaution while handling the device.

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