ISO124U - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ISO124U
Manufacturer

TI
ChipWorker Part#

CW1268544
Category

Amplifier, Buffer IC
Package

SOIC-8
Description

Isolation Amplifier, Precision, 1 Amplifier, 50mV, 1.5kV, ± 4.5V to ± 18V, SOIC, 8Pins
Documentation

Datasheet

ISO124U Global Supplier

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ISO124U Specifications

Attribute	Attribute Value

Part Number	ISO124U
Manufacturer	TI
ChipWorker Part#	CW1268544
Category	Amplifier, Buffer IC
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	15.0 V
Operating Voltage	4.5V ~ 18V
Supply Current	5 mA
Number of Circuits	1 Circuit
Number of Channels	1 Channel
Number of Positions	8 Position
Bandwidth	50 kHz
Slew Rate	2.00 V/μs
Isolation Voltage	1.5 kV
Input Offset Voltage	50 mV
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-25 ℃
3dB Bandwidth	50 kHz
Supply Voltage (Max)	30V ~ 50V
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Size-Length	17.9 mm
Size-Width	7.5 mm
Size-Height	2.3 mm
Operating Temperature	-25℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Each
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

Product Description

The ISO124U is a Precision Isolation Amplifier incorporating a novel duty cycle modulation-demodulation technique. The signal is transmitted digitally across a 2-pF differential capacitive barrier. With digital modulation, the barrier characteristics do not affect signal integrity, thus resulting in excellent reliability and good high-frequency transient immunity across the barrier. Both barrier capacitors are imbedded in the plastic body of the package. The ISO124U is easy to use. No external components are required for operation. The key specifications are 0.010% maximum nonlinearity, 50kHz signal bandwidth and 200µV/°C VOS drift. A power supply range of ±4.5V to ±n, 18V and quiescent currents of ±5mA on VS1 and ±5.5mA on VS2 make the ISO124U ideal for a wide range of applications.
100% Tested for high-voltage breakdown
Rated 1500Vrms
140dB at 60Hz High IMR
0.010% Maximum nonlinearity
VO = ±10V Bipolar operation
Ease of use, fixed unity gain configuration
Green product and no Sb/Br
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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