ISO5852SQDWRQ1 - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ISO5852SQDWRQ1
Manufacturer

TI
ChipWorker Part#

CW6627704
Package

SOIC-16
Description

High-CMTI 2.5A/5A Isolated IGBT, MOSFET Gate Driver With Split Outputs and Protection Features 16-SOIC -40℃ to 125℃
Documentation

Datasheet

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ISO5852SQDWRQ1 Specifications

Attribute	Attribute Value

Part Number	ISO5852SQDWRQ1
Manufacturer	TI
ChipWorker Part#	CW6627704
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	16 Pin
Case/Package	SOIC-16
Rise/Fall Time	18ns, 20ns
Number of Outputs	1 Output
Output Voltage	15V ~ 30V
Output Current	5 A
Number of Channels	1 Channel
Number of Positions	16 Position
Power Dissipation	1.255 W
Rise Time	18 ns
Isolation Voltage	5700 Vrms
Fall Time	20 ns
Fall Time (Max)	20 ns
Fall Time (Max)	18 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	1255 mW
Supply Voltage (Max)	5.5 V
Supply Voltage (Min)	2.25 V
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Operating Temperature	-40℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

Product Description

The ISO5852S-Q1 device is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns provides accurate control of the output stage.
An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT detect, a mute logic immediately blocks the output of the isolator and initiates a soft-turnoff procedure which disables the OUTH pin and pulls the OUTL pin to low over a time span of 2 μs. When the OUTL pin reaches 2 V with respect to the most-negative supply potential, VEE2, the gate-driver output is pulled hard to the VEE2 potential, turning the IGBT immediately off.
When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turnoff period. The FLT output condition is latched and can be reset only after the RDY pin goes high, through a low-active pulse at the RST input.
When the IGBT is turned off during normal operation with a bipolar output supply, the output is hard clamp to VEE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low-impedance path which prevents the IGBT from dynamic turnon during high-voltage transient conditions.
The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input-side and output-side supplies. If either side has insufficient supply, the RDY output goes low, otherwise this output is high.
The ISO5852S-Q1 device is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

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