ISO7421ED - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ISO7421ED
Manufacturer

TI
ChipWorker Part#

CW33135161
Category

Interface Isolator, Digital Isolator
Package

SOIC-8
Description

Digital Isolator, 7ns, 3V, 5.5V, SOIC, 8Pins
Documentation

Datasheet

ISO7421ED Global Supplier

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ISO7421ED Specifications

Attribute	Attribute Value

Part Number	ISO7421ED
Manufacturer	TI
ChipWorker Part#	CW33135161
Category	Interface Isolator, Digital Isolator
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	3.30 V, 5.00 V
Rise/Fall Time	1.8ns, 1.7ns
Number of Channels	2 Channel
Number of Positions	8 Position
Data Rate	50.0 Mbps
Isolation Voltage	2500 Vrms
Thermal Shutdown	No
Fall Time (Max)	2 ns
Fall Time (Max)	2 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	3V ~ 5.5V
Supply Voltage (Max)	5.5 V
Supply Voltage (Min)	3 V
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Operating Temperature	-40℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Each
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The ISO7421ED is a dual-channel Digital Isolator provides galvanic isolation up to 2500VRMS for 1 minute per UL and 4242VPK per VDE. This device has two isolated channels. Each channel has a logic input and output buffer separated by a silicon dioxide (SiO2) insulation barrier. Used in conjunction with isolated power supplies, these devices prevent noise currents on a data bus or other circuit from entering the local ground and interfering with or damaging sensitive circuitry. The ISO7421 has the two channels in opposite direction. It has TTL input thresholds and operates from 3 to 5.5V supplies.
Default output high and low options
Low power consumption
200ps Typical low pulse skew
50kV/µs Typical transient immunity
>25 Years isolation barrier life
>50Mbps Signalling rate
Green product and no Sb/Br
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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